Get Circuits at the Nanoscale: Communications, Imaging, and PDF

By Krzysztof Iniewski

ISBN-10: 1420070622

ISBN-13: 9781420070620

Circuits for rising applied sciences past CMOS New intriguing possibilities are abounding within the box of physique sector networks, instant communications, information networking, and optical imaging. in line with those advancements, top-notch overseas specialists in and academia current Circuits on the Nanoscale: Communications, Imaging, and Sensing. This quantity, specified in either its scope and its concentration, addresses the state of the art in built-in circuit layout within the context of rising structures. A needs to for someone fascinated by circuit layout for destiny applied sciences, this publication discusses rising fabrics that may take approach functionality past commonplace CMOS. those comprise Silicon on Insulator (SOI), Silicon Germanium (SiGe), and Indium Phosphide (InP). 3-dimensional CMOS integration and co-integration with Microelectromechanical (MEMS) know-how and radiation sensors are defined in addition. issues within the booklet are divided into complete sections on rising layout strategies, mixed-signal CMOS circuits, circuits for communications, and circuits for imaging and sensing. Dr. Krzysztof Iniewski is a director at CMOS rising applied sciences, Inc., a consulting corporation in Vancouver, British Columbia. His present examine pursuits are in VLSI ciruits for clinical purposes. He has released over a hundred examine papers in overseas journals and meetings, and he holds 18 foreign patents granted within the usa, Canada, France, Germany, and Japan. during this quantity, he has assembled the contributions of over 60 world-reknown specialists who're on the best in their box on the planet of circuit layout, advancing the financial institution of information for all who paintings during this fascinating and burgeoning region.

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4 Inferring Process Parameters .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Conclusion .. . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Acknowledgments.. . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 References .. . . . . . . . . . . . . .. . . . . . . . . . .

1 INTRODUCTION Silicon complementary metal oxide semiconductor (CMOS) integrated circuits (ICs) continue to achieve increasing levels of integration for digital applications such as microprocessors and highperformance application-specific integrated circuits (ASICs). However, manufacturing cost and copper-low-k interconnect delay may constrain future scaling past the 22 nm technology node. In addition, integration of high-performance, highly integrated digital ICs with other technologies such as analog/mixed-signal ICs, imagers, sensors, and wireless transceivers can be limited by packaging technologies, both conventional planar (or 2D) technologies and more recent three-dimensional (3D) stacking (either packaged die, bare die with full wafer thickness, or thinned die).

1 INTRODUCTION CMOS device scaling has increased the impact of process variability to the point where it is now regarded as a major roadblock to further scaling [1]. The control of process fluctuations has not kept pace with rapidly shrinking device dimensions. Furthermore, the drive to improve performance has enticed device and circuit designers to operate at conditions that are more sensitive to variability.

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Circuits at the Nanoscale: Communications, Imaging, and Sensing by Krzysztof Iniewski


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