Read e-book online Analog Integrated Circuit Design PDF

By David Johns Ken Martin

ISBN-10: 0471144487

ISBN-13: 9780471144489

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Perhaps the biggest difference is that rds is now infinite. Another major difference is that C gs and C gd are now much smaller. Since the channel has disappeared, these capacitors are now due to only overlap and fringing capacitance. 114) However, the reduction of C gs and C gd does not mean that the total gate capacitance is necessarily smaller. We now have a "new" capacitor, C gb , which is the gate- Fig. 23 A small-signal model for aMOSFET that is turned off. 3 Advanced MOS Modelling 39 to-substrate capacitance.

1 0 Find the T model parameter. 9. Solution The value of rs is simply the inverse of rs = - I 9m 9m. 72 kQ The value of rd s remains the same. either 143 ill or 170 kQ. depending o n the drain-source voltage. Most of the capacitors in the small-signal model are related to the physical tran sistor. Shown in Fig. 20 is a cross section of a MOS transistor. where the parasitic capacitances are shown at the appropriale locations, The largest capacitor in Fig. 20 is C gs ' This ca pacitance is primarily due 10 the change in cha nnel charge as a result of a cha nge in VGS' It can be shown [Tsividis, 1987J that C gs is approximately given by ?

A typical value might be V'd = -2 V. Small-Signal Madelling in the Active Regian The most commonly used small-signal model for a MOS transistor operating in the active region is shown in Fig. 17. , replaced by open circuits). This leads to the lowfrequency, small-signal model shown in Fig. 18. 67), which is repeated here for convenience, ro = Iln Cox(W\v 2 L! 76) lO. For an n-channel transistor. Fora p-channel transistor, y is proportional to Noll. It is possible to realizedepletion p-channel transistors, but these areof little value andseldom worththe extraprocessing involved.

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Analog Integrated Circuit Design by David Johns Ken Martin


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